Melting behaviors of aluminum (111) perfect/nonperfect surfaces, characterized by structure ordering parameter, have been investigated by classical molecular dynamics simulation with embedded atom method potential. Al (111) perfect surface has a superheating temperature above bulk Al melting point T m , in this work, by about 80 K.Al nonperfect (111) surface has somewhat different local lattice structure from that on (111) perfect surface. Al nonperfect (111) surfaces tempt to premelt when temperature is less than T m , in our simulation, by about 45 K. Aluminum atoms on the nonperfect surface zones are the sources of surface melting, and have larger velocities than those on the perfect surface zones.
Charge transport mediators are commonly used in photoelectronic devices to promote selective charge transport and mitigate carrier losses. However, related investigations are mainly carried out by the trial‐and‐error method, and a deeper understanding of its local charge transport behavior is still lacking. Herein, a comprehensive study is performed on a BiVO4/Ti3C2 photoanode to reveal its local charge transport properties by combing microprobe technologies and numerical computations. For the first time, a nano‐Schottky junction is directly shown at the BiVO4/Ti3C2 interface and the band bending is quantified with promoted hole transport and prolonged photocarrier's lifetime. These mechanistic insights leverage a path to further optimize performance through interface engineering and achieve a photocurrent of 5.38 mA cm−2 at 1.23 V versus reversible hydrogen electrode. This work provides deeper insight into the function of charge transport mediators in view of interface contact rather than material nature and demonstrates a strategy to improve photoelectrochemical performance through Fermi‐level engineering.
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