High power consumption of nonvolatile memory is a major challenge, as it reduces the memory efficiency of information storage devices. The magnetoelectric (ME) coupling in multiferroic nanocomposites, which can be utilized in magnetoelectric random access memory, is an effective approach to reduce power consumption in information storage. Here, a type of ME nanocomposite embedded with 0.5 wt % Fe3O4 is presented, exhibiting higher ME voltage coefficients for piezoelectric thin films. Specifically, the ME voltage coefficient of the P(VDF-TrFE)/Fe3O4 composite developed in this study is 8.97 mV/(cm·Oe), which is 17.5% higher compared to that of the pure P(VDF-TrFE) at a H dc of 1000 Oe. Meanwhile, the enhanced ME effect of smart nanocomposites is characterized by the increase of diffraction peak intensity at a microscopic level. The nanocomposite films exhibit high ME voltage coefficients and information storage performance, providing a great potential for creating next-generation memory devices in the realm of artificial intelligence and wearable devices.

Smart sensors with excellent performance are accelerating the development of biomedicine and the Internet of Energy. Nanodielectrics exhibit unique electrical and mechanical properties. As the predominant materials in optical magnetic field sensor (MFS), they can not only exert the anti‐interference of optical sensing, but improve the measuring characteristics of optical sensors. For instance, the optical fibre quantum probe for the magnetic field can obtain a higher sensitivity of 0.57 nT/Hz1/2, while the measurement range of the sensor that uses Co‐doped ZnO nanorods as cladding is 17–180 mT. Here, these exciting recent achievements in the realm of optical sensing methods for magnetic field detection are reviewed, with a focus on nanodielectrics, which provide an emerging opportunity to achieve higher sensitivity and a wider measurement range of MFS.