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We describe a novel millimeter wave antenna based on sapphire substrate. An infrared transparent millimeter wave antenna and the characterization of its radiation pattern, gain, main frequency, and dielectric infrared transmission were reported. The proposed antenna was constructed from several infrared transparent dielectric materials with thin gold film array elements using a photolithographic process. Several single‐layer infrared‐transparent substrates were stacked. As a infrared transparent window, the antennas have applications in multimode communications, navigation, and detection, particularly for millimeter wave and infrared wavelength in a common aperture system.

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The preparation of surface passivation layers on InSb is essential in the process of device fabrication. An Al2O3 passivation film was deposited on the surface of medium wave InSb film by atomic layer deposition (ALD). A series of variable area photodiode devices with different P/A ratios were fabricated. The performance of the device is characterized at 77K. The effects of ALD Al2O3 and anodic oxidation on the leakage current of diode devices were investigated. The surface leakage current of the passivated photodetectors was reduced by an order of magnitude over the anode sulfidation passivated photodetectors. Moreover, the metal-insulator-semiconductor (MIS) device were developed respectively, and the effects of different films as a dielectric layer on the interfacial characteristics were investigated.

This paper presents results for films of CuAl x O y were deposited on the sapphire by reactive magnetron co-sputtering using DC applied to the high-purity Cu target,RF applied to the high-purity Al target.Copper aluminum oxide film (CuAl x O y ) is transparent for infrared and conductive. The properties of the films are influenced by the power of sputtering,the thickness of films etc. deposition parameters. It has been found that, by fine-tuning the sputtering parameters, the films with both reasonably low resistance and high transmission can be obtained simultaneously.The relationship between the process parameters and the properties of the films were established, the process parameters is very important for preparation of the films later.The relationship between the average transmittance, electrical conductivity and thickness of the films etc. parameters were set up.Key words：copper aluminum oxides，conductive films，Infrared transmission， resistivity of the film，reactive magnetron co-sputtering