Lifting the valley degeneracy in two-dimensional transition metal dichalcogenides could promote their applications in information processing. Various external regulations, including magnetic substrate, magnetic doping, electric field, and carrier doping, have been implemented to enhance the valley splitting under the magnetic field. Here, a phase engineering strategy, through modifying the intrinsic lattice structure, is proposed to enhance the valley splitting in monolayer WSe 2 . The valley splitting in hybrid H and T phase WSe 2 is tunable by the concentration of the T phase. An obvious valley splitting of ∼4.1 meV is obtained with the T phase concentration of 31% under ±5 T magnetic fields, which corresponds to an effective Landeǵ eff factor of −14, about 3.5-fold of that in pure H-WSe 2 . Comparing the temperature and magnetic field dependent polarized photoluminescence and also combining the theoretical simulations reveal the enhanced valley splitting is dominantly attributed to exchange interaction of H phase WSe 2 with the local magnetic moments induced by the T phase. This finding provides a convenient solution for lifting the valley degeneracy of two-dimensional materials.

We investigate the spin-polarized transport properties of a two-dimensional electron gas in a n-type diluted magnetic narrow gap semiconductor quantum well subjected to a perpendicular magnetic and electric field. Interesting beating patterns in the magneto resistance are found which can be tuned significantly by varying the electric field. A resonant enhancement of spin-polarized current is found which is induced by the competition between the s-d exchange interaction and the Rashba effect [Y. A. Bychkov and E. I. Rashba, J. Phys. C 17, 6039 (1984)].

It is shown theoretically that the propagation of plasmons can be tuned by an external electric field via spin-orbit interactions in a two-dimensional electron gas formed in a semiconductor heterostructure. This may provide a manageable way of transmitting quantum information in a quantum device. A possible plasmon field effect transistor is proposed.