A high quality factor Fabry–Pérot cavity (FPC) biosensor with smooth and flat micro-channel surface is realized by using a silicon on insulator substrate, in which the oxide layer functions as an etch-stop layer. The measured quality factor and sensitivity of the FPC biosensor are 861 and 1100 nm/RIU (refractive index units), respectively, and the corresponding detection limit (DL) reaches 1.1 × 10−5 RIU. Moreover, due to the smooth and flat channel surface, higher quality factor and better DL can be obtained with increasing reflectivity of the Bragg reflector of the FPC biosensor.

InAs/InP core/shell nanowires with different shell thicknesses were grown by a two-step method, and large-scale assembly of single nanowire was realized by using dielectrophoresis alignment and patterned grooves. Thousands of single nanowire field-effect transistors were fabricated on a single chip. The effect of InP shell thickness on the electron mobility and density of InAs nanowires are experimentally investigated and discussed.

Bandgap engineering is important for realizing high-performance semiconductor devices. In this paper, an investigation on the nanowire diode with a tapered InAs/InP core-shell structure was carried out. The strain distribution along the nanowire can be changed via the shell thickness and the gradient of the tapering. Due to the misfit-strain between InAs/InP, a strain-induced bandgap variation of 0.21 eV along the tapered InAs wire, which results in the rectifying I-V characteristic of the diode, was realized with an InP shell thickness of 6.5 nm. Moreover, due to the optimized shell thickness and strain-induced built-in electric field (including piezoelectric field), a recorded room-temperature electron mobility of 22300 cm 2 V À1 s À1 was achieved. This concept of bandgap engineering would enable the designing of a new kind of nanowire device.

A silicon-on-insulator based optofluidic biosensor with integrated dual-channel Fabry–Pérot cavity is proposed for optical differential detection. A detection limit of 5.5 × 10−8 refractive index unit is experimentally demonstrated, owing to the high quality factor of the cavity and the differential detection, which can extract the small signal for efficient amplification and greatly reduce the system noise. Moreover, the measurement system features low cost compared with that of surface-plasmon-resonance sensor and ring-resonator sensor.

Diodes as basic structures for semiconductor devices can be realized using a heterojunction or p‐type/n‐type doping. As for doping, the introduced impurities could substantially reduce the carrier mobility. For heterojunctions, on the other hand, engineering of the bandgap is required via integrating different materials, which is normally limited by the misfit strain resulting from the lattice mismatch between the materials. Similarly, bandgap engineering is important for realizing highperformance semiconductor devices such as lasers, LEDs, HBTs, HEMTs, etc. In comparison with bulk materials, nanowires (NWs) show advantages in accommodating the misfit strain. Thus, it is promising to strain‐engineer the NW bandgap for realizing highcarrier‐ mobility diodes. Pengbo Liu et al. (pp. http://doi.wiley.com/10.1002/pssa.201431727) carried out an investigation on nanowire diodes with a tapered InAs/InP core/shell structure. The strain distribution along the nanowire can be changed via the shell thickness and the gradient of the tapering. Due to the misfit strain between InAs/InP, a straininduced bandgap variation of 0.21 eV along the tapered InAs wire, which results in rectifying I–V characteristics of the diode, was realized with an InP shell thickness of 6.5 nm. Moreover, due to the optimized shell thickness and strain‐induced builtin electric field (including piezoelectric field), a recorded roomtemperature electron mobility of 22300 cm2/Vs was achieved. This concept of bandgap engineering would enable the designing of a new kind of nanowire device.