Ferroelectric Bi 3.25 La 0.75 Ti 3 O 12 (BLT) films and LaAlO 3 (LAO) insulator layers for metal/ferroelectric/insulator/semiconductor structure were first fabricated by chemical solution deposition and pulsed laser deposition. LAO films as a buffer layer show an amorphous structure, a relatively high dielectric constant and good electrical properties. Pt/BLT/LAO/n-Si annealed at 650˚C exhibit better hysteretic capacitance-voltage characteristics, with a memory window of 1.3 V and extremely low leakage current density. Furthermore, the memory window does not alter with the sweeping rates of the bias voltage. This implies that the Si surface potential has been controlled by the poling charges of BLT. The introduction of a LAO buffer layer prevents the interfacial diffusion between the BLT and Si substrate effectively. Therefore, BLT/LAO/Si is an attractive candidate for ferroelectric field effect transistor applications.

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The long-term structural memory of a polymeric substance is determined by the concentration, size, and space distribution of the elements of topological disorder present in it. The short-term structural memory is the result of the reversible reconstruction of existing elements.