No abstract

3D stacked ReRAM is difficult to realize because of the difficulties in bipolar selecting device and the lack of suitable architecture to decode the 2-terminal device for 3D array. In this study, we report a novel self-rectifying WSi x O y ReRAM with good high temperature data retention and read disturb immunity. Rapid thermal oxidation (RTO) of WSi x forms the WSi x O y layer as both the storage node and a rectifying device with the p+ poly electrode. The simple process to achieve this self-rectifying device allows us to incorporate it into a double-density 3D architecture that adopts a regular MOSFET for X-Y decoding. We estimate this device and architecture that can easily provide operation margins for up to 16 layers of 3D ReRAM.