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Hydrogen production by water splitting with photoelectrochemical cell is one of novel ways to provide clean and renewable energy. Ag-In-S ternary semiconductor thin film prepared by chemical bath deposition (CBD) on the surface of indium tin oxide conductive glass represented a mixture phase of AgInS 2 / AgIn 5 S 8 . Under the visible light irradiation with intensity of 100 mW/cm 2 , the photocurrent density could be up to 12 mA/cm 2 . After long term irradiation, however, photocorrosion occurred on Ag-In-S film resulted in the photocurrent decay. Thus, zinc sulfide (ZnS) with a wide energy bandgap represented a superior stability and no absorption of visible light were prepared as protective layers on the surface of Ag-In-S film deposited by CBD method. After a long time photoelectrochemical measurement under visible light irradiation, the modified Ag-In-S photocatalyst with one ZnS protective layer deposited by CBD method showed an obvious enhancement in the durability without a serious decay in photocurrent.