We propose a new laser annealing process for forming P-Base-Junction (Here, P represents the type of impurity) in the trench gate power MOSFETs (Metal Oxide Semiconductor Field Effect Transistor). An equivalent shallow junction structure for P-Base-Junction with uniform impurity distribution is achieved by the green laser annealing process of pulse mode. By comparing the laser annealing with conventional RTA (Rapid Thermal Annealing), lower sheet resistance and higher impurity activation in the shallow junction have been confirmed.