We report an ultrahigh-density ferroelectric data recording system
based on purely electrical principles, using a scanning nonlinear
dielectric microscopy technique and ferroelectric thin films of LiTaO3
single crystals. A nano-sized domain dot array of areal density of 1.50Tbit inch−2
has been successfully demonstrated in a
z surface of a congruent
LiTaO3
single-crystal film. The radius of the domain dots was 10.4 nm. These nano-dots
remained stable at least over 24 h, and could be over-written by dots. The
ferroelectric domain inversion characteristics using a stoichiometric LiTaO3
single-crystal film was also studied. A very small nano-sized domain dot with a
radius of 6 nm was successively formed.
Abstract. We have demonstrated that scanning nonlinear dielectric microscopy (SNDM) exhibits high performance and high resolution in observing the dopant concentration profile of transistors. In this study, we have measured standard Si samples, which are known to have onedimensional dopant concentration values, calibrated by using conventional secondary ion mass spectrometry (SIMS). Good quantitative agreement between the SNDM signals and dopant density values was obtained by SIMS. We succeeded in visualizing high-resolution dopant profiles in n-and p-type channel MOSFET with 40 nm gate channels. It is considered that SNDM would be an effective method in measuring the quantitative two-dimensional dopant profiles of semiconductor devices. Finally, we have observed the dopant depth profiles of an SRAM memory cell by using SNDM, and succeeded in detecting the insufficient extension ion implantation in the PMOS transistor area.
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