The dopant distribution and depletion layer in a cross-section of a SiC double diffused MOSFET (DMOSFET) is visualized using super-higher-order scanning nonlinear dielectric microscopy (SHO-SNDM), which is a form of scanning probe microscopy. Analysis of the data acquired by SHO-SNDM clarifies the dopant distribution in great detail, which is otherwise difficult to detect using conventional scanning capacitance microscopy or scanning microwave microscopy. Moreover, the newly developed SHO-SNDM method enables us to distinguish the n-type, p-type, and depletion layer regions very clearly, and they are found to be consistent with the general DMOSFET structure.