The transient photocurrent is one of the key parameters of the spatial radiation effect of photoelectric devices, and the energy level defect affects the transient photocurrent. In this paper, by studying the deep level transient spectrum of a self-designed Schottky diode, the defect properties of the interface region of the anode metal AlCu and Si caused by high-temperature annealing at 150 ℃, 200 ℃ and 300 ℃ for 1200 h have been quantitatively analyzed. The study shows that the defect is located at the position of + 0.41 eV on the valence band, the concentration is 2.8×1013/cm2, and the capture cross section is σ = 8.5×1017. The impurity energy level mainly comes from the diffusion of Al atom in anode metal. We found that the defect did not cause the electrical performance degradation and obvious morphology change of the device, but the transient photocurrent increased significantly. The reason is that the high temperature treatment results in a growth in the density of states at the interface between AlCu-Si. The more mismatched dislocations and recombination center increased the reverse current of the heterojunction. The above view is proved by the TCAD simulation test.

In this study, we investigate the Tchebyshev polynomials expansion method for the kernels identification of nonlinear systems. In aerodynamic systems, all the output data to an arbitrary input may be obtained by executing the Computational Fluid Dynamic (CFD) program code. This calculation process may take more than several hours or days to complete. In comparison with the indicial or impulse methods our method is efficient, which does not need more output data for the identification of the second-order kernel by running CFD code repeatedly. This new approach may be applied to the aeroelastic problems. Two examples illustrate the whole process.