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Round-robin studies on relative sensitivity factors (RSFs) in secondary ion mass spectrometry (SIMS) were conducted using bulk GaAs samples uniformly doped with various impurity elements. A total of 31 laboratories participated in two round-robins. More than 30 sets of relative ion intensities were obtained for B, Si, Cr, Mn, Fe, Cu, Zn, In and Te in GaAs. The RSFs for both positive and negative ions were derived for several types of SIMS instruments. The e †ect of primary ion incident angle was examined using quadrupole-based instruments and found to be the determining factor of the instrumental dependence of RSF.

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