The performance of a single-ended two-stage high gain low-noise amplifier (LNA) fabricated in a low-cost 200 GHz f T and f max 0.18 mm SiGe BiCMOS technology is presented. The LNA shows a maximum power gain of 21 dB at 87 GHz with a 3 dB bandwidth from 81 to 92.6 GHz. The measured noise figure is 9.1 dB at 87 GHz and is in the range 8-10 dB from 80 to 93 GHz. The reverse isolation is better than 45 dB over a 3 dB bandwidth. The measured input and output return losses are 17.3 and 11.7 dB at 87 GHz, respectively. The measured input-referred 1 dB compression point (input P 1dB ) of the amplifier is 218.8 dBm at 87 GHz. The chip area including the pads is 635 Â 625 mm. The LNA draws a total current of 15.2 mA from a 3.3 V supply.

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