Double quantum well resonant tunnel diodes are demonstrated in InAlAs/InGaAs for the first time. Peak-to-valley ratios of greater than 70:1 at room temperature and 125:1 below 200 K are observed.

Orientation-controlled growth of two-dimensional (2D) transition metal dichalcogenides (TMDCs) may enable many new electronic and optical applications. However, previous studies reporting aligned growth of WSe 2 usually yielded very small domain sizes. Herein, we introduced gold vapor into the chemical vapor deposition (CVD) process as a catalyst to assist the growth of WSe 2 and successfully achieved highly aligned monolayer WSe 2 triangular flakes grown on c-plane sapphire with large domain sizes (130 μm) and fast growth rate (4.3 μm•s −1 ). When the aligned WSe 2 domains merged together, a continuous monolayer WSe 2 was formed with good uniformity. After transferring to Si/SiO 2 substrates, field effect transistors were fabricated on the continuous monolayer WSe 2 , and an average mobility of 12 cm 2 •V −1 •s −1 was achieved, demonstrating the good quality of the material. This report paves the way to study the effect of catalytic metal vapor in the CVD process of TMDCs and contributes a novel approach to realize the growth of aligned TMDC flakes.

Bug report summarization has been explored in past research to help developers comprehend important information for bug resolution process. As text mining technology advances, many summarization approaches have been proposed to provide substantial summaries on bug reports. In this paper, we propose an enhanced summarization approach called TSM by first extending a semantic model used in AUSUM with the anthropogenic and procedural information in bug reports and then integrating the extended semantic model with the shallow textual information used in BRC. We have conducted experiments with a dataset of realistic software projects. Compared with the baseline approaches BRC and AUSUM, TSM demonstrates the enhanced performance in achieving relative improvements of 34.3% and 7.4% in the F1 measure, respectively. The experimental results show that TSM can effectively improve the performance.

Absfmcf-We have fabricated I I I O .~&~O .~~A S active feedback junction field-effect transistors (JFET's) for use in integrated transimpedance photoreceivers. By varying the gate-to-source voltage VGS, the resistance can be continuously tuned between 3 and 40 kO with a drain-to-source capacitance of

Heterostructure p-n junction tunnel diodes with high peak to valley ratios (12: 1) at room temperature are demonstrated. The variation of peak and valley currents in diodes with different tunnel barriers is described, and the mechanisms responsible for the valley current and its temperature dependence are proposed. Ways to improve the peak to valley ratio and reduce junction capacitance are discussed.