The successful fabrication of hybrid SOI-GeOI wafers is reported. Process alternatives are documented by detailed characterizations. This co-integration achieves high hole mobility in Ge islands and high electron mobility in Si islands.

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Different technologies for the fabrication of Germanium photodetectors were developed. Germanium was grown by RPCVD in a silicon cavity in order to provide a direct coupling with a rib silicon waveguide. With direct deposition of Ti/TiN/AlCu on Ge, Metal-Schotkky-Metal (MSM) diodes were formed. PIN photodiode were fabricated either with in-situ doping during RP-CVD epitaxy of Ge, either by ion implantation. For vertical PIN photodiode, the germanium was successfully etched either in mesa either anisotropically with Cl 2 gazes. Small footprint Ge photodiodes can lead to high speed operation on CMOS.