Yttrium‐doped barium zirconate (BZY) thin films were deposited on MgO and sapphire substrates using a pulsed‐laser deposition (PLD) method with varying deposition rates. The films deposited with a low deposition rate exhibited highly oriented microstructures with little grain boundaries. The electrical conductivities of these films were higher than those of the films, deposited with high deposition rates, which showed little‐oriented polycrystalline microstructure. While the films deposited on the MgO substrates had a stoichiometric composition, those deposited on the sapphire substrates had a high barium deficiency, which was possibly due to the differences in the crystal structure and large lattice mismatch between the sapphire substrate and the BZY film. The electrical conductivity of the highly oriented BZY film, grown on MgO substrate with a low deposition rate, showed little barium deficiency and the highest conductivity value that is higher than the typical conductivity of sintered pellets.

We report the synthesis, crystal structure and characterization by means of single crystal x-ray diffraction, neutron powder diffraction, magnetic, thermal and transport measurements of the new heavy fermion compounds Ce 2 MAl 7 Ge 4 (M = Co, Ir, Ni, Pd). These compounds crystallize in a noncentrosymmetic tetragonal space group P42 1 m, consisting of layers of square nets of Ce atoms separated by Ge-Al and M-Al-Ge blocks. Ce 2 CoAl 7 Ge 4 , Ce 2 IrAl 7 Ge 4 and Ce 2 NiAl 7 Ge 4 order magnetically behavior below T M = 1.8, 1.6, and 0.8 K, respectively. There is no evidence of magnetic ordering in Ce 2 PdAl 7 Ge 4 down to 0.4 K. The small amount of entropy released in the magnetic state of Ce 2 M Al 7 Ge 4 (M = Co, Ir, Ni) and the reduced specific heat jump at T M suggest a strong Kondo interaction in these materials. Ce 2 PdAl 7 Ge 4 shows non-Fermi liquid behavior, possibly due to the presence of a nearby quantum critical point.

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Correction equations of the coincidence-summing effect for efficiencies of HpGe detector based on the decay scheme were developed by considering the summing up to triple coincidence. The correction equations which do not dependent on the kind of the Ge detector are very useful for efficiency calibrations of a Ge detector in the energy region from 60 to 400 keV by using 75Se radionuclide even with very short source-to-detector distances.