All-optical pump-probe measurements of magnetization dynamics have been performed upon epitaxial Co 2 MnSi͑001͒ Heusler alloy thin films annealed at temperatures of 300, 400, and 450°C. An ultrafast laserinduced modification of the magnetocrystalline anisotropy triggers precession which is detected by timeresolved magneto-optical Kerr effect measurements. From the damped oscillatory Kerr rotation, the frequency and relaxation rate of the precession is determined. Using a macrospin solution of the Landau-Lifshitz-Gilbert equation the effective fields acting upon the sample magnetization are deduced. This reveals that the magnetization is virtually independent of the annealing temperature while the fourfold magnetocrystalline anisotropy decreases dramatically with increasing annealing temperature as the film structure changes between the B2 and L2 1 phases. From the measured relaxation rates, the value of the apparent Gilbert damping parameter is found to depend strongly upon the static field strength and in-plane static field orientation. The variation of the apparent damping parameter is generally well reproduced by an inhomogeneous broadening model in which the presence of B2 and L2 1 phases leads to a large dispersion of the magnetocrystalline anisotropy. However, for the sample annealed at a temperature of 300°C, the lack of a detailed fit to the data suggests that the apparent anisotropy of the apparent damping parameter might alternatively arise due to a network of dislocations with fourfold symmetry.

Mechanism of reversing the Neel domain walls in the Co nanostripes with transverse magnetic anisotropy Appl. Phys. Lett. 101, 252412 (2012) Structural and magnetic properties of biaxially textured NiFe2O4 thin films grown on c-plane sapphire J. Appl. Phys. 112, 123910 (2012) Thick CoFeB with perpendicular magnetic anisotropy in CoFeB-MgO based magnetic tunnel junction AIP Advances 2, 042182 (2012) Ferromagnetic enhancement and magnetic anisotropy in nonpolar-oriented (Mn, Na)-codoped ZnO thin films Appl. Phys. Lett. 101, 242401 (2012) The nature of Cr center in GaN: Magnetic anisotropy of GaN:Cr single crystals

The phonon spectrum of Ge2Sb2Te5 is a signature of its crystallographic structure and underlies the phase transition process used in memory applications. Epitaxial materials allow coherent optical phonons to be studied in femtosecond anisotropic reflectance measurements. A dominant phonon mode with frequency of 3.4 THz has been observed in epitaxial Ge2Sb2Te5 grown on GaSb(001). The dependence of signal strength upon pump and probe polarization is described by a theory of transient stimulated Raman scattering that accounts for the symmetry of the crystallographic structure through use of the Raman tensor. The 3.4 THz mode has the character of the 3 dimensional T2 mode expected for the Oh point group, confirming that the underlying crystallographic structure is cubic. New modes are observed in both Ge2Sb2Te5 and GaSb after application of large pump fluences, and are interpreted as 1 and 2 dimensional modes associated with segregation of Sb.

Femtosecond optical pump-probe measurements have been made upon epitaxial, polycrystalline, and amorphous thin films of Ge2Sb2Te5 (GST). A dominant coherent optical phonon mode of 3.4 THz frequency is observed in time-resolved anisotropic reflectance (AR) measurements of epitaxial films, and is inferred to have 3-dimensional T2-like character based upon the dependence of its amplitude and phase on pump and probe polarization. In contrast, the polycrystalline and amorphous phases exhibit a comparatively weak mode of about 4.5 THz frequency in both reflectivity (R) and AR measurements. Raman microscope measurements confirm the presence of the modes observed in pump-probe measurements, and reveal additional modes. While the Raman spectra are qualitatively similar for all three phases of GST, the mode frequencies are found to be different within experimental error, ranging from 3.2 to 3.6 THz and 4.3 to 4.7 THz, indicating that the detailed crystallographic structure has a significant effect upon the phonon frequency. While the lower frequency (3.6 THz) mode of amorphous GST is most likely associated with GeTe4 tetrahedra, modes in epitaxial (3.4 THz) and polycrystalline (3.2 THz) GST could be associated with either GeTe6 octahedra or Sb-Te bonds within defective octahedra. The more polarizable Sb-Te bonds are the most likely origin of the higher frequency (4.3–4.7 THz) mode, although the influence of Te-Te bonds cannot be excluded. The effect of high pump fluence, which leads to irreversible structural changes, has been explored. New modes with frequency of 3.5/3.6 THz in polycrystalline/amorphous GST may be associated with Sb2Te3 or GeTe4 tetrahedra, while a 4.2 THz mode observed in epitaxial GST may be related to segregation of Sb.

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