High-energy ion-implantation-induced gettering of copper in silicon beyond the projected ion range: The transprojected-range effect Comment on "Interstitial-type defects away from the projected ion range in high energy ion implanted and annealed silicon" [Appl.

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In this paper we approximate by the combination of double Gaussian and exponential functions the radial distributions of the absorbed electron energy density in a 125 nm PMMA resist layer on YBa 2 Cu 3 O 7 thin-film/substrate targets obtained by means of Monte Carlo simulation for a zero-width δ-function and the following variables (i) the substrate material (SrTiO 3 and MgO), (ii) the electron beam energy E 0 (25, 50 and 75 keV) and (iii) the YBa 2 Cu 3 O 7 film thickness d (0, 100, 200 and 300 nm). The values of the parameters of the analytical function are calculated using an original Monte Carlo technique. These values are presented in the form of 3D diagrams which show their dependences on beam energy and on high-temperature superconducting film thickness and can also be used for approximate determination of the parameters at different initial conditions.

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