This letter reports on the formation of a layered film structure and the highly improved photovoltaic output of the lead lanthanum zirconate titanate (PLZT) employed. The photovoltaic current of the PLZT film per unit width was more than 102 times larger than that of bulk PLZT, while the photovoltaic voltage per unit thickness in the layered film structure was almost the same as that in bulk ceramics. These differences are due to the characteristics of the film structure and configuration of the electrode. A simple model is used for the phenomenological explanation of the improved photovoltaic effect of the PLZT film.

This paper reports the formation of a newlayered film structure and the highly improved photovoltaic output of the lead lanthanum zirconate titanate (PLZT) employed. The new structural design is described using an upper top transparent indium tin oxide (ITO) electrode. The PLZT film structure exhibited V and lA output. The photovoltaic current of the PLZT film per unit width was more than 10 2 times larger than that of bulk PLZT, while the photovoltaic voltage per unit thickness in the layered film structure was almost the same as that in bulk ceramics and single crystals. These differences are due to the characteristics of the film structure and configuration of the electrode. The PLZT film also has the advantage of easily controllable parameters: film thickness, illuminated area, and illumination intensity. A simple model is used for the phenomenological explanation of the improved photovoltaic effect of the PLZT film.

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This paper reports on the formation of multilayer structures and the highly improved photo-induced output current of the lead lanthanum zirconate titanate (PLZT) employed. The photo-induced effect of ferroelectrics has the advantage of simple mechanisms of non-bias applications, which are indispensable for semiconductor p-n junctions. But the output current of PLZT bulk is too low for it to be used as a device current source. The new design is described using an upper transparent indium tin oxide electrode. The PLZT film structure exhibited an output current of the order of microamperes upon light illumination. The photo-induced current of the PLZT film was more than 102 times that of bulk PLZT. These differences are due to the characteristics of the design of the multilayers including the configuration of the electrode. The PLZT film also has the advantage of easy output control and suitability for use on Si. A simple model is used for an illustratative explanation of the improved photo-induced effect in the PLZT film. Results show that the photo-induced effect of the ferroelectric multilayer is useful as the current source for micro-electro-mechanical systems.

In this paper, we report on the formation of multilayer structures and the highly improved photovoltaic output current of the lead lanthanum zirconate titanate (PLZT) film employed. The photovoltaic effect of ferroelectrics has the advantage of simple mechanisms of nonbias applications, which are indispensable for semiconductor p-n junctions. However, the output current of PLZT bulk is too low for use as a device current source. The new design is described using an upper transparent indium tin oxide (ITO) electrode. The PLZT film structure exhibits a µA output current upon light illumination. The photovoltaic current of the PLZT film is more than 102 times that of the bulk PLZT. These differences are due to the characteristics of the design of multilayers including the configuration of the electrode. The PLZT film also has the advantages of easy output control and suitability for use on a Si substrate. A simple model is used for an illustrative explanation of the improved photovoltaic effect of the PLZT film. Results show that the photovoltaic effect of the ferroelectric multilayer is useful as the current source for a micro-electro-mechanical system (MEMS).