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High optical and structural quality of GaN epilayers grown on ( 2¯01) -Ga2O3 KAUST Repository

GaN/AlGaN multiple quantum wells (MQWs) are grown on a 2 01-oriented β-Ga2O3 substrate. The optical and structural characterizations of the MQW structure are compared with a similar structure grown on sapphire. Scanning transmission electron microscopy and atomic force microscopy images show that the MQW structure exhibits higher crystalline quality of welldefined quantum wells, when compared to a similar structure grown on sapphire. X-ray diffraction rocking curve and photoluminescence excitation analyses confirm a lower density of dislocation defects in the sample grown on β-Ga2O3 substrate. Detailed analysis of time-integrated and time

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