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Abstract— Various kinds of errors in pixel voltage are considered, using computer simulation for the design of 15‐in.‐diagonal full‐color TFT‐LCDs. Adopting the advanced capacitively coupled driving method with a double‐scanning gate pulse for TFT‐LCD driving, satisfactory display characteristics are confirmed by experiments on fabricated models.

SUMMARYDesign rules are presented for the suppression of photocurrents generated in the depletion layers of the channel/drain junction regions of low-temperature poly-Si thin-film transistors (TFTs). Device simulation based on modeling the behavior of the density of states in a low-temperature poly-Si TFT was used to find the width of the junction depletion layer. These simulations show that in order to suppress photocurrents to below 6 pA, the LDD region must have a sheet resistance in the range of 30 and 70 kΩ/", which forces its length to exceed 1 µm.

Abstract— A new design simulator to simulate the characteristics of poly‐Si TFTs taking into account its physical structure was developed. By using the simulator, we can optimize the length and the sheet resistance of the LDD region in order to obtain sufficient ON currents and to suppress OFF currents under both dark and illuminated conditions.