New photo LC alignment materials based on poly (ω ‐(4‐chalconyloxy) alkoxyphenyl maleimide) were synthesized and evaluated. On the films of these materials, LC alignment was regulated parallel to the polarization plane of the exposed LPUV at a large dose, and thus generated pretilt angle among 1–5° by one‐step slantwise LPUV exposure. TN cells were fabricated using these materials.
We propose and fabricate a 1-bit adder circuit having only two single electron transistors (SETs) for AND and XOR logic operations by using SA-MOVPE. Two SETs have two common input gates and different Coulomb oscillation periods. The logic operation can be achieved on the basis of a binary decision diagram (BDD) architecture using Coulomb blockade (CB) in GaAs dots. We also demonstrate Coulomb oscillations caused by input gate voltages for a SET. Oscillation features of two input gates are the same and their phases can be shifted by the control gate.
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