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Nonlinearity of GaAs FET amplifiers under class Ap)operation such as abrupt increase of the output power against the input power can be effectively reduced by suppressing even-order harmonic distortion in gate RF voltage. In this paper, we demonstrate the effect of the source harmonic tuning and condition for improving the linearity of power GaAs FET's under class AB operation by the source harmonic tuning technique. not driven in the optimum circuit condition under class AB operation. On improvement of efficiency in power amplifiers, a harmonic reaction microwave amplifier has been plre posed [3], and the design method and performances have been demonstrated [3], [4]. However, they have shown the optimum design parameters only for the output malching conditions, and much attention has not been paid for the conditions of the input matching circuits. On the other hand, a sourcx hairmonic controlled circuit has been proposed [5], and it has shown the harmonic tuning effect on the efficiency under class F or B operation; however, the linearity of a class AB amplifier has not been tiis-

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