A p-type silicon (Si) nano-wire piezoresistor, whose minimum cross-sectional area is 53 nm 53 nm, was fabricated by combination of thermal diffusion, EB (electron beam) direct writing and RIE (reactive ion etching). The maximum value of longitudinal piezoresistance coefficient [011] of the Si nano-wire piezoresistor was found to be 48 10 5 (1/MPa) at surface impurity concentration of 5 10 19 (cm 3) and it has enough sensitivity for mechanical sensor applications. The longitudinal piezoresistance coefficient [011] of the Si nano-wire piezoresistor increased up to 60% with a decrease in the cross sectional area, while transverse piezoresistance coefficient [011] decreased with a increase in the aspect ratio of the cross section. These phenomena were briefly investigated based on a hole energy consideration and FEM (finite element method) stress analysis.

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SummaryThis paper describes the first study on a polycrystalline Si (poly-Si) nano wire from the viewpoint of MEMS mechanical sensor application.In order to confirm an ability of the poly-Si nano wire piezoresistor as a sensing element of a mechanical sensor, current-voltage (I-V) characteristics and the piezoresistive effect were investigated.The poly-Si nano wire piezoresistor, whose thickness is 32nm and width is 53nm, was fabricated by the combination of the electron beam (EB) direct writing and RIE. A remarkable phenomenon

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