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The electrical properties of n-type InP metal-insulator-semiconductor (MIS) structures have been investigated. As gate insulators, InPxOy layers are formed by a new method. In the method, a Px′Oy′ layer is deposited on InP by evaporation of P2O5 powder. The reaction between the Px′Oy′ layer and InP substrate yields an InPxOy layer. The InPxOy layers 500–1450 Å thick exhibit high resistivities ρ and low dielectric dissipations D, i.e., ρ≊2×1015 Ω cm and D≤0.01 in the frequency range 0.02–100 kHz at room temperature. The hysteresis in the capacitance-voltage curves of a typical InP MIS structure is found to be less than 0.6 V and an ion-drift type. The interfacial properties of InP MIS structures are shown to be well explained by the statistical model in the conductance method. A typical value of the minimum surface state density is evaluated as 3.3×1011 cm−2 eV−1 at about 0.26 eV below the conduction-band edge. The distribution of the electron capture cross sections σ of surface states is also obtained, e.g., σ=1.6×10−16 cm2 at 0.4 eV below the conduction-band edge.

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Anodic oxide metal-insulator-semiconductor structures on ntype InSbElectrical properties of a CdTe/InSb hetero metalinsulatorsemiconductor structure Appl. Phys. Lett. 52, 1306Lett. 52, (1988; 10.1063/1.99145 Hysteresis free SiO2/InSb metalinsulatorsemiconductor diodesThe electrical properties of n-type InSb metal-insulator-semiconductor (MIS) structures have been investigated. As gate insulators, SiIn,P,,O, layers are formed on InSb by a new method. In the method, an In-SiO,, double layer is formed on the InSb ( 111)B surface by evaporation of SiO and In. Further, a P,,,Oi layer is deposited on the double layer. The reaction between a P,,, 0, layer and In-SiO,, double layer yields a SiIn,PyO, layer. The SiIn,P,O, layers exhibit high resistivities p, i.e., p~6.5~ lOi R cm at 100 K and 1.0X lOi R cm at room temperature. The hysteresis in the capacitance-voltage (C-V) and conductance-voltage (G-V)curves of InSb MIS structures at 100 K is found to be less than 0.6 V and an injection type. The surface-state density in the MIS interface is evaluated by including the effects of the nonparabolicity of the conduction band and Fermi-Dirac statistics for electrons in InSb. A typical value of the minimum surface state density is observed as 8.3 X IO" cm-2 eV -' at about 0.05 eV below the conduction-band edge. Further, the C-V characteristics of InSb MIS structures at room temperature are discussed by including the features of the narrow band-gap semiconductor.1506