Crystalline thin films of polytetrafluoroethylene were deposited on Si (100) wafers by F2 laser (157 nm) ablation. X-ray photoemission spectra indicated that the composition of deposited films was similar to the source material. The surface morphology of films deposited at room temperature contained numerous fibrous structures in size of 100N40o nm, but they were smoothed out at elevated wafer temperature of N370 K. The refractive index was N1.35 at 633 nm. Ionized fragments in the ablation plume were measured by a Faraday cup assembly, but their effect on the deposited films was not observed at the present ionization ratio.

Crystalline thin films of polytetrafluoroethylene were deposited on Si (100) wafers by F2 laser (157 nm) ablation. X-ray photoemission spectra indicated that the composition of deposited films was similar to the source material. The surface morphology of films deposited at room temperature contained numerous fibrous structures in size of 100N40o nm, but they were smoothed out at elevated wafer temperature of N370 K. The refractive index was N1.35 at 633 nm. Ionized fragments in the ablation plume were measured by a Faraday cup assembly, but their effect on the deposited films was not observed at the present ionization ratio.

High specific laser output energy at 157 nm from an electron beam pumped He/Ne/F2 gas mixture

No abstract

Small-signal gain and saturation intensity of a discharge pumped F2 laser at 157 nm, operated at high pressures (<10 atm) and high excitation rates (7–39 MW/cm3), were measured in an oscillator-amplifier configuration. The small-signal net gain reaches 37±4%/cm at an excitation rate of ∼26 MW/cm3 for a 6-atm laser gas. A saturation intensity, which depends on a nonsaturable absorption coefficient, was estimated.