A significant degradation under liot-hole injection is observed. in p+ -poly PMOSFETs with oxynitride gate dielectrics. Both oxynitrides formed by gate oxide grown on Nitrogen Implanted S,i S,ubstrates (NISS) and NO-annealed SiOz oxynitride gate dielectrics are used and compared to control Si02 gate dielectrics of identical thicknesses. A physical model responsible for such enhanced degradation in PMOSFETs with oxynitride gate dielectric is proposed.It is shown that the hole injection barrier lowering as a result of the nitrogen-rich layer at the Si02/Si interface in oxynitride is responsible for such enhanced degradation.

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The Institute for Advanced Technology is using a pair of physical scale model alternators as counter-rotating pulsed alternator simulators. These alternators have similar but not identical electrical characteristics. The original goal was to use these alternators to simulate a two-machine pulsed alternator system to study thyristor converter operation, with the two machines electrically connected at the output (dc side) of the thyristor (SCR) converter. Additional experiments were also run with the two alternators electrically connected at the input (ac side) of the thyristor converter. In the experiments, control algorithms were developed to test self-excitation and to discharge pulsed energy into various types of loads-resistive, inductive, and capacitive-to evaluate energy sharing from each alternator. Negative resistance circuits were implemented to adjust the field winding time constant of each alternator to achieve correct resistance/reactance ratio of full-scale pulsed alternators and to achieve equal energy discharge from each alternator.Index Terms-Alternator pair, alternator simulator, pulsed alternator, physical scale model, source simulator.