Zn O ∕ ( La , Sr ) ( Al , Ta ) O 3 ( LSAT ) heterointerface is engineered to control the crystallographic orientation of ZnO films grown by plasmas-assisted molecular beam epitaxy. Lattice-matched in-plane alignment of [112¯0]ZnO‖[112¯]LSAT has been realized using Mg modification of the substrate surface, which is confirmed with in situ reflection high-energy electron diffraction observation, and ex situ characterization of x-ray diffraction and transmission electron microscopy. The low-temperature deposition and high-temperature treatment of the Mg layer on the oxygen-terminated LSAT(111) surface results in selective nucleation of a MgO interface layer which serves as a template for single-domain epitaxy of ZnO. Oxygen-polar ZnO film with an atomically smooth surface has been obtained, which is favorable for metal-ZnO Schottky contact with high barrier height.

A glass-supported, backside-illuminated AlGaAs/GaAs heterojunction charge-coupled device (CCD) imager is reported. The CCD structure was grown by liquid phase epitaxy on a GaAs substrate. The top epi-layer was bonded to glass and the GaAs substrate completely removed. A ten-pixel three-phase Schottky gate CCD was fabricated on the glass-supported layer. The CCD was successfully operated as a line imager with the photosignal entering through the support glass.