No abstract

In this work, the single event effect of the Silicon-germanium heterojunction bipolar transistor (SiGe HBT) was thoroughly investigated. By considering the worst bias condition, the sensitive area of the proposed device was scanned with a pulsed laser. With the variation of the collector bias and pulsed laser incident energy, the single event transient of the SiGe HBT was studied. Moreover, the single event transient produced by the laser irradiation at 532 nm wavelength was more pronounced than that of the 1064 nm wavelength. Finally, the impact of the equivalent linear energy transfer (LET) of the 1064 nm pulsed laser on the single transient event was qualitatively examined by performing technology computer-aided design (TCAD) simulations, whereas a good consistency between the experimental data and the simulated outcomes was attained.