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The contrast of dislocations in 4H-SiC crystals shows distinctive features on grazing-incidence X-ray topographs for diffraction at different positions on the operative rocking curve. Ray-tracing simulations have previously been successfully applied to describe the dislocation contrast at the peak of a rocking curve.The present work shows that the dislocation images observed under weak diffraction conditions can also be simulated using the ray-tracing method. These simulations indicate that the contrast of the dislocations is dominated by orientation contrast. Analysis of the effective misorientation reveals that the dislocation contrast in weak-beam topography is more sensitive to the local lattice distortion, consequently enabling information to be obtained on the dislocation sense which cannot be obtained from the peak.

Utilization of an Si(331) beam conditioner together with an Si(111) double-crystal monochromator (DCM) enables the angular resolution of synchrotron X-ray topography to be increased by an order of magnitude compared with grazing-incidence topography or back-reflection topography conducted with the DCM alone. This improved technique with extremely small beam divergence is referred to as synchrotron X-ray plane-wave topography (SXPWT). This study demonstrates that the rocking curve width of 4H-SiC 0008 in PWT is only 2.5′′ and thus the lattice distortion at the scale of 1′′ will significantly affect the diffracted intensity. This work reports the ultra-high angular resolution in SXPWT which enables detailed probing of the lattice distortion outside the dislocation core in 4H-SiC, where the sign of the Burgers vector can be readily determined through comparison with ray-tracing simulations.

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