Recent theories have proposed a concept of valley photonic crystals as an analog of gapped valleytronic materials such as MoS 2 and bilayer graphene. Here, we further extend the applicability of valley photonic crystals to surface electromagnetic waves and experimentally demonstrate a valley surface-wave photonic crystal on a single metal surface as a photonic duplicate of MoS 2 . Both bulk transport and edge transport are directly mapped with a near-field microwave imaging system. The photonic valley pseudospins are demonstrated, together with the photonic valley Hall effect that splits the opposite photonic valley pseudospins into two opposite directions. The valley edge transport in MoS 2 or other transition-metal dichalcogenide monolayers, which is different from bilayer graphene but still stays unrealized in condensed-matter systems, is demonstrated on this MoS 2 -like photonic platform. Our study not only offers a tabletop platform to study the valleytronic physics, but also opens a venue for on-chip integrated photonic device applications using valley-polarized information.
The recent discovery of higher-order topological insulators (TIs) [1-5] has opened new possibilities in the search for novel topological materials and metamaterials. Secondorder TIs have been implemented in two-dimensional (2D) systems [6-19] exhibiting topological 'corner states', as well as three-dimensional (3D) systems having one-dimensional (1D) topological 'hinge states' [20]. Third-order TIs, which have topological states three dimensions lower than the bulk (which must thus be 3D or higher), have not yet been reported. Here, we describe the realization of a third-order TI in an anisotropic diamondlattice acoustic metamaterial. The bulk acoustic bandstructure has nontrivial topology characterized by quantized Wannier centers. By direct acoustic measurement, we observe corner states at two corners of a rhombohedron-like structure, as predicted by the quantized Wannier centers. This work extends topological corner states from 2D to 3D, and may find applications in novel acoustic devices.Higher-order TIs are a new class of topological materials supporting a generalization of the bulk-boundary correspondence principle, in which topological states are guaranteed to exist along boundaries two or more dimensions smaller than that of the bulk [1][2][3][4][5]. In standard TIs, topological edge states occur at one lower dimension than the bulk [21,22]; for instance, a quantum Hall insulator has a 2D bulk and topological states on 1D edges. By contrast, a 2D second-order TI supports zero-dimensional (0D) topological 'corner states'. Such a lattice was first devised based on quantized quadrupole moments [1,2] and quickly realized in mechanical [6], electromagnetic [7], and electrical [9] metamaterials. Later, another type of 2D second-order TIs based on quantized Wannier centers, was proposed [23][24][25] and demonstrated in acoustic metamaterials [10,11]. In 3D materials, second-order TI behavior has also been observed in the form of 1D topological 'hinge states' in bismuth [20].According to theoretical predictions, TIs of arbitrarily high order are possible. However, in real materials the bulk is at most 3D. Thus, barring the use of 'synthetic' dimensions [26,27], the only remaining class of high-order TI is a third-order TI with 3D bulk and 0D corner states.As of this writing, no such material has been reported in the literature, although there exists a theoretical proposal based on quantized octupole moments [1,2].Here, we realize a third-order TI in a 3D acoustic metamaterial, observing topological states at the corners of a rhombohedron-like sample. This third-order TI is based on the extension of Wannier-type second-order TIs to 3D [23,25], and can be regarded as a 3D generalization of the classic 1D Su-Schrieffer-Heeger (SSH) model [28]. Just as in the SSH case, the eigenmode polarizations are quantized by lattice symmetries, and the Wannier centers are pinned to highsymmetry points; the mismatch between the Wannier centers and lattice truncations gives rise to charge fractionalization and hence lower-dimensio...
The emerging field of topological acoustics that explores novel gauge-field-related phenomena for sound has drawn attention in recent years. However, previous approaches constructing a synthetic gauge field for sound predominantly relied on a periodic system, being unable to form a uniform effective magnetic field, thus lacking access to some typical magnetic-induced quantum phenomena such as Landau energy quantization. Here we introduce strain engineering, previously developed in graphene electronics and later transferred to photonics, into a two-dimensional acoustic structure in order to form a uniform effective magnetic field for airborne acoustic wave propagation. Landau levels in the energy spectrum can be formed near the Dirac cone region. We also propose an experimentally feasible scheme to verify the existence of acoustic Landau levels with an acoustic measurement. As a new freedom of constructing a synthetic gauge field for sound, our study offers a path to previously inaccessible magneticlike effects in traditional periodic acoustic structures.
We report the carrier dynamics in GaAsSb ternary alloy grown by molecular beam epitaxy through comprehensive spectroscopic characterization over a wide temperature range. A detailed analysis of the experimental data reveals a complex carrier relaxation process involving both localized and delocalized states. At low temperature, the localized degree shows linear relationship with the increase of Sb component. The existence of localized states is also confirmed by the temperature dependence of peak position and band width of the emission. At temperature higher than 60 K, emissions related to localized states are quenched while the band to band transition dominates the whole spectrum. This study indicates that the localized states are related to the Sb component in the GaAsSb alloy, while it leads to the poor crystal quality of the material, and the application of GaAsSb alloy would be limited by this deterioration.
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