Ternary metal-element alloys have been reported as efficient electrocatalysts toward various electrochemical reactions, but a unique three-dimensional (3D) Ir-alloyed ternary nanosheet-composed flower (NCF) structure has not been explored yet. Herein, an innovated 1.8 nm Ir-alloyed ultrathin ternary PdIrCu NCF structure is synthesized via one-pot solvothermal reduction without using any surfactant. The as-prepared PdIrCu/C NCF catalyst remarkably improves the stability than commercial Pd/C toward formic acid electrooxidation while resulting in significantly increased mass activity. The improvement of electrocatalytic properties depends on the introduction of Ir and Cu atoms, which greatly prevented poisoning from CO while modifying the electronic structure of Pd for increased reaction active sites and accelerated charge-transfer rate as well as facilitated mass transport by ultrathin NCF 3D structure. Therefore, this catalyst possesses a promising application prospect in electrochemical energy storage/conversion systems.

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The nickel hydroxide-modified nickel (NMN) electrode was prepared by cyclic voltammetry. The modified electrode exhibited better catalytic effect toward electrochemical oxidation of methane in 1.0 mol . L 21 NaOH solution. The catalytic activation of nickel hydroxide on the nickel electrode surface was investigated in different supporting electrolyte solutions by the cyclic voltammetry method in detail, and the related electrochemical oxidation of methane at the NMN electrode was first proposed by amperometric i-t curve method under the experiment conditions. The results indicated that in the 1.0 mol . L 21 NaOH solution, the anodic peak current increased with the increased concentration of methane.

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Cu2ZnSnS4 (CZTS) thin films have been first in situ grown by reactive magnetron co-sputtering and its characterizations has been carried out by energy dispersive spectroscopy(EDS), X-ray diffraction(XRD), scan electron microscope(SEM), optical transmittance and electronic measurement. It was observed that the grown film shows homogeneous, compact surface morphology, and consists of large columnar grains throughout the thickness. The atom ratio Cu/(Zn+Sn) is about 1, while Zn/Sn is larger than 1 and decreases with the increase of substrate temperature. XRD analysis indicates that the grown film exhibits strong preferential orientation along (112) plane and the structural properties depend on growth temperature and Cu/(Zn+Sn) ratio. The in situ grown CZTS film has an optical absorption coefficient higher than 104 cm-1, and the optical band gap becomes narrow with the increase of substrate temperature and achieves (1.51±0.01)eV at 500℃. The conduction type of the CZTS films is p-type and the value of carrier concentration is comparable with values of device quality CIGS.