Solar cells based on organometal hybrid perovskites have exhibited promising commercialization potential owing to their high efficiency and low-cost manufacturing. However, the poor outdoor operational stability of perovskite solar cells restricted their practical application, and moisture permeation and organic compounds volatilization are realized as the main factors accelerating performance degradation. Herein, we developed a composite encapsulation, by sequentially depositing a compact Al 2 O 3 layer and a hydrophobic 1H,1H,2H,2H-perfluorodecyltrichlorosilane layer on the completed device, to efficiently circumvent vapor permeability. Thus, the stability of the encapsulated perovskite solar cells was systematically investigated under simulated operational conditions. It was found that the MAPbI 3 perovskite was prone to decay into solid PbI 2 and organic vapor at high temperature or upon light illumination, and the decomposition was reversible in a well-encapsulated environment, resulting in reversible performance degradation and recovery. The enhanced thermal stability was ascribed to the competition between the perovskite decomposition and reverse synthesis. The as-prepared high-quality, multilayered encapsulation scheme demonstrated superior sealing property, and no obvious performance decline was observed when the device was stored under ambient air, continuous light illumination, double 85 condition (85 °C, 85% humidity), or even water immersion. Therefore, this work paves the way for a scalable and robust encapsulation strategy feasible to hybrid perovskite optoelectronics in a reproducible manner.

Semiconducting conjugated polymers with photoswitching behavior are highly demanded for field‐effect transistors (FETs) with tunable electronic properties. Herein a new design strategy is established for photoresponsive conjugated polymers by incorporating photochromic units (azobenzene) into the flexible side alkyl chains. It is shown that azobenzene groups in the side chains of the DPP (diketopyrrolopyrrole)‐quaterthiophene polymer (PDAZO) can undergo trans/cis photoisomerization in fully reversible and fast manner. Optically tunable FETs with bistable states are successfully fabricated with thin films of PDAZO. The drain‐source currents are reduced by 80.1% after UV light irradiation for ≈28 s, which are easily restored after further visible light irradiation for ≈33 s. Such fast optically tunable FETs are not reported before. Moreover, such current photomodulation can be implemented for multiple light irradiation cycles with good photofatigue resistance. Additionally, thin film charge mobility of PDAZO can be reversibly modulated by alternating UV and visible light irradiations. On the basis of theoretical calculations and GIWAXS data, it is hypothesized that the dipole moment and configuration changes associated with the trans‐/cis‐photoisomerization of azobenzene groups in PDAZO can affect the respective intra‐chain and inter‐chain charge transporting, which is responsible for the optically tunable behavior for FETs with thin films of PDAZO.

n-Type organic/polymeric semiconductors with high electron mobilities are highly demanded for future flexible organic circuits. Except for developing a new conjugated backbone, recent studies show that side-chain engineering also plays an indispensable role in boosting the charge-transporting property. In this paper, we report a new polymer PNDI2T-DTD with a representative n-type naphthalene diimide (NDI)–bithiophene backbone for high-performance n-type flexible thin-film transistors through branching/linear side-chain engineering strategy. Serving as the flexible side chains, the linear/branching side-chain pattern is found to be effective in tuning the preaggregation behavior in solution and the packing ordering of polymeric chains, resulting in the improvement of thin-film crystallinity. The electron mobility of the thin film of PNDI2T-DTD on flexible substrates can reach 1.52 cm2 V–1 s–1, which is approximately five times higher than that of PNDI2T-DT with the same conjugated backbone and only branching alkyl chains.

Y2O3 is regarded as one of the potential environmental barrier coating (EBC) materials for Al2O3f/Al2O3 ceramic matrix composites owing to its high melting point and close thermal expansion coefficient to Al2O3. However, the relatively high thermal conductivity and unsatisfactory calcium-magnesium-aluminosilicate (CMAS) resistance are the main obstacles for the practical application of Y2O3. In order to reduce the thermal conductivity and increase the CMAS resistance, four cubic bixbyite structured high-entropy oxides RE2O3, including (Eu0.2Er0.2Lu0.2Y0.2Yb0.2)2O3, (Sm0.2Er0.2Lu0.2Y0.2Yb0.2)2O3, (Sm0.2Eu0.2Er0.2Y0.2Yb0.2)2O3, and (Sm0.2Eu0.2Lu0.2Y0.2Yb0.2)2O3 were designed and synthesized, among which (Eu0.2Er0.2Lu0.2Y0.2Yb0.2)2O3 and (Sm0.2Er0.2Lu0.2Y0.2Yb0.2)2O3 bulks were prepared by spark plasma sintering (SPS) to investigate their mechanical and thermal properties as well as CMAS resistance. The mechanical properties of (Eu0.2Er0.2Lu0.2Y0.2Yb0.2)2O3 and (Sm0.2Er0.2Lu0.2Y0.2Yb0.2)2O3 are close to those of Y2O3 but become more brittle than Y2O3. The thermal conductivities of (Eu0.2Er0.2Lu0.2Y0.2Yb0.2)2O3 and (Sm0.2Er0.2Lu0.2Y0.2Yb0.2)2O3 (5.1 and 4.6 W·m−1·K−1) are only 23.8% and 21.5% respectively of that of Y2O3 (21.4 W·m−1·K−1), while their thermal expansion coefficients are close to those of Y2O3 and Al2O3. Most importantly, HE RE2O3 ceramics exhibit good CMAS resistance. After being attacked by CMAS at 1350 °C for 4 h, the HE RE2O3 ceramics maintain their original morphologies without forming pores or cracks, making them promising as EBC materials for Al2O3f/Al2O3 composites.