Controlling the emissivity of a thermal emitter has attracted growing interest, with a view toward a new generation of thermal emission devices. To date, all demonstrations have involved using sustained external electric or thermal consumption to maintain a desired emissivity. In the present study, we demonstrated control over the emissivity of a thermal emitter consisting of a film of phase-changing material Ge2Sb2Te5 (GST) on top of a metal film. This thermal emitter achieves broad wavelength-selective spectral emissivity in the mid-infrared. The peak emissivity approaches the ideal blackbody maximum, and a maximum extinction ratio of >10 dB is attainable by switching the GST between the crystalline and amorphous phases. By controlling the intermediate phases, the emissivity can be continuously tuned. This switchable, tunable, wavelength-selective and thermally stable thermal emitter will pave the way toward the ultimate control of thermal emissivity in the field of fundamental science as well as for energy harvesting and thermal control applications, including thermophotovoltaics, light sources, infrared imaging and radiative coolers.

The ability to continuously tune the emission wavelength of mid-infrared thermal emitters while maintaining high peak emissivity remains a challenge. By incorporating the nonvolatile phase changing material GeSbTe (GST), two different kinds of wavelength-tunable mid-infrared thermal emitters based on simple layered structures (GST-Al bilayer and Cr-GST-Au trilayer) are demonstrated. Aiming at high peak emissivity at a tunable wavelength, an Al film and an ultrathin (∼5 nm) top Cr film are adopted for these two structures, respectively. The gradual phase transition of GST provides a tunable peak wavelength between 7 μm and 13 μm while high peak emissivity (>0.75 and >0.63 for the GST-Al and Cr-GST-Au emitters, respectively) is maintained. This study shows the capability of controlling the thermal emission wavelength, the application of which may be extended to gas sensors, infrared imaging, solar thermophotovoltaics, and radiative coolers.

Controlling the emissivity of a thermal emitter has attracted growing interest with a view towards a new generation of thermal emission devices. So far, all demonstrations have involved sustained external electric or thermal consumption to maintain a desired emissivity. Here control over the emissivity of a thermal emitter consisting of a phase changing material Ge2Sb2Te5 (GST) film on top of a metal film is demonstrated. This thermal emitter shows broad wavelength-selective spectral emissivity in the midinfrared. The peak emissivity approaches the ideal blackbody maximum and a maximum extinction ratio of above 10dB is attainable by switching GST between the crystalline and amorphous phases. By controlling the intermediate phases, the emissivity can be continuously tuned. This switchable, tunable, wavelength-selective and thermally stable thermal emitter will pave the way towards the ultimate control of thermal emissivity in the field of fundamental science as well as for energy-harvesting and thermal control applications, including thermophotovoltaics, light sources, infrared imaging and radiative coolers.