The outstanding optoelectrical properties and high-quality factor of whispering gallery mode perovskite nanocavities make it attractive for applications in small lasers. However, efforts to make lasers with better performance have been hampered by the lack of efficient methods for the synthesis and transfer of perovskite nanocavities on desired substrate at quality required for applications. Here, we report transfer printing of perovskite nanocavities grown by chemical vapor deposition from mica substrate onto SiO2 substrate. Transferred perovskite nanocavity has an RMS roughness of ~ 1.2 nm and no thermal degradation in thermal release process. We further use femtosecond laser to excite a transferred perovskite nanocavity and measures its quality factor as high as 2580 and a lasing threshold of 27.89 μJ/cm2 which is almost unchanged as compared with pristine perovskite nanocavities. This method represents a significant step toward the realization of perovskite nanolasers with smaller sizes and better heat management as well as application in optoelectronic devices.

The outstanding optoelectrical properties and high-quality factor of whispering gallery mode perovskite nanocavities make it attractive for applications in small lasers. However, efforts to make lasers with better performance have been hampered by the lack of efficient methods for the synthesis and transfer of perovskite nanocavities on desired substrate at the quality required for applications. Here, we report transfer printing of perovskite nanocavities grown by chemical vapor deposition from mica substrate onto SiO2 substrate. Transferred perovskite nanocavity has an RMS roughness of ~1.2 nm and no thermal degradation in thermal release process. We further use femtosecond laser to excite a transferred perovskite nanocavity and measures its quality factor as high as 2580 and a lasing threshold of 27.89 µJ/cm2 which is almost unchanged as compared with pristine perovskite nanocavities. This method represents a significant step toward the realization of perovskite nanolasers with smaller sizes and better heat management as well as application in optoelectronic devices.

MAPbI 3 perovskite has attracted widespread interests for developing low-cost near infrared semiconductor gain media. However, it faces the instability issue under operation conditions, which remains a critical challenge. It is found that the instability of the MAPbI 3 nanoplatelet laser comes from the thermal-induced degradation progressing from the surface defects towards neighboring regions. By using PbI 2 passivation, the defect-initiated degradation is significantly suppressed and the nanoplatelet degrades in a layer-by-layer way, enabling the MAPbI 3 laser to sustain for 4500 s ( 2.7 × 10 7    pulses ), which is nearly three times longer than that of the nanoplatelet laser without passivation. Meanwhile, the PbI 2 passivated MAPbI 3 nanoplatelet laser with the nanoplatelet cavity displays a maximum quality factor up to ∼ 7800 , the highest reported for all MAPbI 3 nanoplatelet cavities. Furthermore, a high stability MAPbI 3 nanoplatelet laser that can last for 8500 s ( 5.1 × 10 7    pulses ) is demonstrated based on a dual passivation strategy, by retarding the defect-initiated degradation and surface-initiated degradation simultaneously. This work provides in-depth insights for understanding the operating degradation of perovskite lasers, and the dual passivation strategy paves the way for developing high stability near infrared semiconductor laser media.

Efficient heat dissipation that can minimize temperature increases in device is critical in realizing electrical injection lasers. High-thermal-conductivity diamonds are promising for overcoming heat dissipation limitations for perovskite lasers. In this study, we demonstrate a perovskite nanoplatelet laser on a diamond substrate that can efficiently dissipate heat generated during optical pumping. Tight optical confinement is also realized by introducing a thin SiO2 gap layer between nanoplatelets and the diamond substrate. The demonstrated laser features a Q factor of ∼1962, a lasing threshold of 52.19 µJ cm−2, and a low pump-density-dependent temperature sensitivity (∼0.56 ± 0.01 K cm2 µJ−1) through the incorporation of the diamond substrate. We believe our study could inspire the development of electrically driven perovskite lasers.

MAPbI3 perovskite has attracted widespread interests for developing low-cost near infrared semiconductor gain media. However, it faces the instability issue under operation conditions, which remains a critical challenge. It is found that the instability of the MAPbI3 nanoplatelet laser comes from the thermal-induced-degradation progressing from the surface defects towards neighboring regions. By using PbI2 passivation, the defect-initiated degradation is significantly suppressed and the nanoplatelet degrades in a layer-by-layer way, enabling the MAPbI3 laser sustain for 4500 s (2.7×107 pulses), which is almost 3 times longer than that of the nanoplatelet laser without passivation. Meanwhile, the PbI2 passivated MAPbI3 nanoplatelet laser with the nanoplatelet cavity displaying a maximum quality factor up to ~7800, the highest reported for all MAPbI3 nanoplatelet cavities. Furthermore, a high stability MAPbI3 nanoplatelet laser that can last for 8500 s (5.1×107 pulses) is demonstrated based on a dual passivation strategy, by retarding the defect-initiated degradation and surface-initiated degradation, simultaneously. This work provides in-depth insights for understanding the operating degradation of perovskite lasers and the dual passivation strategy paves the way for developing high stability near infrared semiconductor laser media.