Quasi-two-dimensional Ruddlesden-Popper perovskites driving carrier self-separation have rapidly advanced the development of high-performance optoelectronic devices. However, insightful understanding of carrier dynamics in the perovskites is still inadequate. The distribution of multiple perovskite phases, crucial for carrier separation, is controversial. Here we report a systematic study on carrier dynamics of spin-coated (CHCHCHNH)(CHNH)PbI (n = 3 and 5) perovskite thin films. Efficient electrons transfer from small-n to large-n perovskite phases, and holes transfer reversely with time scales from ∼0.3 to 30.0 ps. The multiple perovskite phases are arranged perpendicularly to substrate from small to large n and also coexist randomly in the same horizontal planes. Further, the carrier separation dynamics is tailored by engineering the crystalline structure of the perovskite film, which leads to controllable emission properties. These results have important significance for the design of optoelectronic devices from solar cells, light-emitting diodes, lasers, and so forth.

approach to realize new functionalities through facile van der Waals coupled 2D layers. [6] Owing to the large dielectric mismatch between the inorganic and organic layers, the quasi-2D RPPs naturally form quantum well structures, in which, the inorganic and organic layers serve as potential wells and barriers, respectively. [7] Moreover, these quantum confined structures impart the appealing characteristics of improved environmental stability and enhanced exciton confinement. [2] These make the quasi-2D RPPs promising for solar cell and light-emitting diode (LED) applications. [5,[8][9][10] Recently, the amplified spontaneous emission (ASE) and lasing behaviors of 2D RPPs have been demonstrated. [11][12][13][14][15][16][17] However, the lasing is mostly obtained from solution-processed spin-coated thin films, in which multiple RPP components inevitably form with different bandgaps that drive cascade carrier transfer and may reshape the build-up of population inversion. [11,14,15,18] Also, the development of continuous-wave or electrically driven RPP lasers central for practical applications is still challenging. The exploitation of homologous RPP lasers is of great importance to gain further insights into the intrinsic lasing mechanisms of these quantum well-like structures as well as the design of low-threshold 2D 2D Ruddlesden-Popper perovskites (RPPs) have aroused growing attention in light harvesting and emission applications owing to their high environmental stability. Recently, coherent light emission of RPPs was reported, however mostly from inhomologous thin films that involve cascade intercompositional energy transfer. Lasing and fundamental understanding of intrinsic laser dynamics in homologous RPPs free from intercompositional energy transfer is still inadequate. Herein, the lasing and loss mechanisms of homologous 2D (BA) 2 (MA) n −1 Pb n I 3n+1 RPP thin flakes mechanically exfoliated from the bulk crystal are reported. Multicolor lasing is achieved from the large-n RPPs (n ≥ 3) in the spectral range of 620-680 nm but not from small-n RPPs (n ≤ 2) even down to 78 K. With decreasing n, the lasing threshold increases significantly and the characteristic temperature decreases as 49, 25, and 20 K for n = 5, 4, and 3, respectively. The n-engineered lasing behaviors are attributed to the stronger Auger recombination and exciton-phonon interaction as a result of the enhanced quantum confinement in the smaller-n perovskites. These results not only advance the fundamental understanding of loss mechanisms in both inhomologous and homologous RPP lasers but also provide insights into developing low-threshold, substrate-free, and multicolor 2D semiconductor microlasers.2D Ruddlesden-Popper perovskites (RPPs), with the general chemical formula of L 2 (MA) n−1 M n X 3n+1 , are composed of welldefined inorganic layers with corner connected [MX 6 ] 4− octahedra and long organic chains (L + ) intercalated between these inorganic fragments. [1][2][3][4][5] This structure promises a viable

1D nanowires of all-inorganic lead halide perovskites represent a good architecture for the development of polarization-sensitive optoelectronic devices due to their high absorption efficient, emission yield, and dielectric constants. However, among as-fabricated perovskite nanowires with the lateral dimensions of hundreds nanometers so far, the optical anisotropy is hindered and rarely explored owing to the invalidating of electrostatic dielectric mismatch in the physical dimensions. Here, well-aligned CsPbBr and CsPbCl nanowires with thickness T down to 15 and 7 nm, respectively, are synthesized using a vapor phase van der Waals epitaxial method. Strong emission anisotropy with polarization ratio up to ≈0.78 is demonstrated in the nanowires with T < 40 nm due to the electrostatic dielectric confinement. With the increasing of thickness, the polarization ratio remarkably reduces monotonously to ≈0.17 until T ≈140 nm; and further oscillates in a small amplitude owing to the wave characteristic of light. These findings not only represent a demonstration of perovskite-based polarization-sensitive light sources, but also advance fundamental understanding of their polarization properties of perovskite nanowires.

Single-crystal perovskites with excellent photophysical properties are considered to be ideal materials for optoelectronic devices, such as lasers, light-emitting diodes and photodetectors. However, the growth of large-scale perovskite single-crystal films (SCFs) with high optical gain by vapor-phase epitaxy remains challenging. Herein, we demonstrated a facile method to fabricate large-scale thin CsPbBr3 SCFs (∼300 nm) on the c-plane sapphire substrate. High temperature is found to be the key parameter to control low reactant concentration and sufficient surface diffusion length for the growth of continuous CsPbBr3 SCFs. Through the comprehensive study of the carrier dynamics, we clarify that the trapped-related exciton recombination has the main effect under low carrier density, while the recombination of excitons and free carriers coexist until free carriers plays the dominate role with increasing carrier density. Furthermore, an extremely low-threshold (∼8 μJ cm–2) amplified spontaneous emission was achieved at room temperature due to the high optical gain up to 1255 cm–1 at a pump power of 20 times threshold (∼20 P th). A microdisk array was prepared using a focused ion beam etching method, and a single-mode laser was achieved on a 3 μm diameter disk with the threshold of 1.6 μJ cm–2. Our experimental results not only present a versatile method to fabricate large-scale SCFs of CsPbBr3 but also supply an arena to boost the optoelectronic applications of CsPbBr3 with high performance.