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The mechanism of greenhouse tomato growth and yield under the integrated water and fertilizer of moistube irrigation (MI) is not clear. Thus, to fill the research gap, a completely randomized trial design was used to study the effects of different irrigation amounts (I; to realize different I, the tube working pressure was 1 (I1), 2 (I2), 3 (I3) m) and fertilizer amounts (F, N-P-K: 20%-20%-20%; the F at a single time was 100 (F1), 200 (F2) and 300 (F3) kg/ha) on growth and yield of tomato. The results showed that with an increase in I, the photosynthetic rate (Pn) of leaves and total dry matter mass (TDM) first increased and then decreased, while the nutrition and the flavor indexes of fruit decreased. With an increase in F, the Pn of leaves, the TDM of tomato and the fruit quality increased at first and then decreased. The effects of I on the yield of tomato was higher than that of F. With an increase in I, the partial fertilizer productivity (PFP) increased at first and then decreased, and the water use efficiency (WUE) decreased by 13.96%. With an increase in F, the WUE increased at first and then decreased, and the PFP decreased by 148.97%. The conclusion based on a spatial analysis was consistent with the comprehensive evaluation of yield and water use efficiency, which showed that I2F2 was the best.

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To reduce the manufacturing cost of integrated circuits, the size of the silicon wafer has become larger, with the diameter increasing from 200 to 450 mm. The large diameter silicon wafer poses challenges to the manufacturing process, as its surface profile is more difficult to control and the planarization process is harder to optimize in mass production. Based on different types of contact, gap adjustment and convex pad dressing methods were proposed in this paper to control the pressure distribution on the wafer, which further influenced the wafer profile. Pressure distributions with different gap values and different pad profiles were explained with contact mechanics and verified by simulations. The simulation results show that a negative gap value and a convex pad profile contribute to the improvement of the pressure uniformity on the wafer. Both methods were then applied in the double-sided planarization (DSP) process of 300 mm silicon wafers. The results from the test run of the DSP process show that wafer flatness is improved with a negative gap value. This indicates that gap adjustment is an effective approach for wafer profile control. In the subsequent mass production of the DSP process, silicon wafers with a global flatness of 120 nm and a site flatness of 21.7 nm were obtained.