ZnFe 2 O 4 films have been prepared using a sol-gel route. The influences of annealing temperature as well as annealing atmosphere on the structural, morphological, magnetic, and optical properties were investigated. The TEM and SEM images show that ZnFe 2 O 4 films are polycrystalline in nature and homogeneous with densely packed grains. ZnFe 2 O 4 films exhibit ferromagnetic behavior at 300 K and high transparency (! 80%) above the absorption band edge. With decreasing annealing temperature and annealing oxygen partial pressure, the saturated magnetism at 300 K is improved and the optical band gap is decreased. The reasons are discussed, and the results show that semitransparent ZnFe 2 O 4 films with room-temperature ferromagnetism can be successfully prepared using a sol-gel method.
Articles you may be interested inEffect of indium surfactant on stress relaxation by V-defect formation in GaN epilayers grown by metalorganic chemical vapor deposition GaN films on AlN buffer layers were grown on ͑111͒ silicon substrates in a vertical rotating disk metal-organic chemical-vapor deposition reactor ͑CVD, Inc.͒. The dependence of residual stress in GaN films on the V/III molar flow ratio was studied. The crystalline quality of GaN films was analyzed by x-ray diffractometry, and the x-ray lattice parameter method was used to determine the residual stress in the films by measuring the c-axis and a-axis strain separately. The x-ray results show that the residual stress decreases with an increasing V/III molar flow ratio if all other growth parameters are kept constant.
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