The monolithic integration of soliton microcomb devices with active photonic components and high-frequency electronics is highly desirable for practical applications. Among many materials, silicon nitride ( SiN x ) waveguide layers prepared by low-pressure chemical vapor deposition (LPCVD) have been the main platform for on-chip optical frequency comb generation. However, the high temperatures involved in LPCVD render it incompatible as a back-end process with complementary metal oxide semiconductor (CMOS) or active III-V compound semiconductor fabrication flows. We report the generation of coherent soliton frequency combs in micro-ring resonators fabricated in deuterated silicon nitride ( SiN x : D ) waveguides with a loss of 0.09 dB/cm. Deposited at 270°C by an inductance-coupled plasma chemical vapor deposition (ICP-CVD) process, the material preparation and fabrication flow are fully CMOS-compatible. These results enable the integration of silicon-nitride-based optical combs and photonic integrated circuits (PICs) on prefabricated CMOS and/or III-V substrates, therefore marking a major step forward in SiN x photonic technologies.

We report very low-loss deuterated silicon nitride (SiNx:D) micro-ring resonators fabricated by back-end CMOS compatible low-temperature plasma-enhanced chemical vapor deposition (PECVD) without annealing. Strong confinement micro-ring resonators with a quality factor of > 2 million are achieved, corresponding to a propagation loss in the 1460-1610 nm wavelength range of ∼ 0.17 dB/cm. We further report the generation of low-noise coherent Kerr microcomb states including different perfect soliton crystals (PSC) in PECVD SiNx:D micro-ring resonators. These results manifest the promising potential of the back-end CMOS compatible SiNx:D platform for linear and nonlinear photonic circuits that can be co-integrated with electronics.