We report a vertically coupled germanium (Ge) waveguide detector integrated on silicon-on-insulator waveguides and an optimized device structure through the analysis of the optical field distribution and absorption efficiency of the device. The photodetector we designed is manufactured by IMEC, and the tests show that the device has good performance. This study theoretically and experimentally explains the structure of Ge PIN and the effect of the photodetector (PD) waveguide parameters on the performance of the device. Simulation and optimization of waveguide detectors with different structures are carried out. The device’s structure, quantum efficiency, spectral response, response current, changes with incident light strength, and dark current of PIN-type Ge waveguide detector are calculated. The test results show that approximately 90% of the light is absorbed by a Ge waveguide with 20 μm Ge length and 500 nm Ge thickness. The quantum efficiency of the PD can reach 90.63%. Under the reverse bias of 1 V, 2 V and 3 V, the detector’s average responsiveness in C-band reached 1.02 A/W, 1.09 A/W and 1.16 A/W and the response time is 200 ns. The dark current is only 3.7 nA at the reverse bias voltage of −1 V. The proposed silicon-based Ge PIN PD is beneficial to the integration of the detector array for photonic integrated arrayed waveguide grating (AWG)-based fiber Bragg grating (FBG) interrogators.

We investigated and fabricated 1 × 8 and 1 × 16 traditional/saddle arrayed waveguide grating (AWG) wavelength division multiplexing devices on flexible substrates. The core layer was made of the negative epoxy photoresist SU-8, and polydimethylsiloxane (PDMS) material was selected for the cladding based on the high refractive index difference. A chemical modification method of PDMS was proposed to enhance the film-forming characteristics of the SU-8 core layer on PDMS substrates. After fabricating and characterizing the optical properties of the AWGs, the dimensions of the proposed 1 × 8 and 1 × 16 AWGs were 0.9 × 0.8 c m 2 and 1.1 × 0.9 c m 2 , respectively. Experimental results showed that the saddle-type 1 × 8 and 1 × 16 AWGs had good signal transmission characteristics, and the insertion losses were only 5.1 dB and 6.8 dB, respectively, which were lower than those of traditional-type AWGs with the same dimensions and number of waveguides.

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In this paper, an evanescently coupled uni-traveling carrier photodiodes (EC-UTC-PDs) have been fabricated and investigated, which can benefit from the incorporation of a multimode diluted waveguide of appropriate length with experiment-simulation comparison. A high responsibvity of 0.68 A/W at 1.55-μm without an anti-reflection coating, -1 dB compression current of more than 19 mA, and a large -1 dB vertical alignment tolerance of 2.2 μm were achieved.

The realization of a fully integrated group IV electrically driven laser at room temperature is an essential issue to be solved. We introduced a novel group IV side-emitting laser at a wavelength of 1550 nm based on a 3-layer Ge/Si quantum well (QW). By designing this scheme, we showed that the structural, electronic, and optical properties are excited for lasing at 1550 nm. The preliminary results show that the device can produce a good light spot shape convenient for direct coupling with the waveguide and single-mode light emission. The laser luminous power can reach up to 2.32 mW at a wavelength of 1550 nm with a 300-mA current. Moreover, at room temperature (300 K), the laser can maintain maximum light power and an ideal wavelength (1550 nm). Thus, this study provides a novel approach to reliable, efficient electrically pumped silicon-based lasers.