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For semiconductor photocatalyst, such as g-C 3 N 4 /WO 3 , heterojunction contact area and specific surface area are the main reasons that limit their photocatalytic activity. Simultaneously, the photogenerated electron-hole transport mechanism of g-C 3 N 4 /WO 3 is still controversial. In this article, g-C 3 N 4 /WO 3 semiconductor photocatalysts were synthesized by ice template method. XRD, SEM, BET, etc. were used to characterize the microstructure and morphology of g-C 3 N 4 /WO 3 with different quality scores of WO 3 , and it was found that the specific surface area of 10 wt% g-C 3 N 4 /WO 3 reached 54.8 m 2 /g, which was 1.92 times that of g-C 3 N 4 . The photocatalytic performance of semiconductor photocatalysts was measured by photolysis of aquatic hydrogen and degradation of RhB solution. The results show that the cumulative hydrogen production of 10 wt % g-C 3 N 4 /WO 3 is 780.11 μmol/g, which is 27.5 % higher than that of g-C 3 N 4 . Simultaneously, the degradation rate of the g-C 3 N 4 /WO 3 composite material to Rhodamine B solution is 4.27 times that of g-C 3 N 4 . The mechanism of electron hole separation was obtained by EPR, and it is proved that g-C 3 N 4 / WO 3 composite material constructs Z-type heterojunction.