We consider two amorphous multilayer nanostructures (MLNS) [(Co 45 Fe 45 Zr 10 )/a-Si: H] 41 -I and [(Co 45 Fe 45 Zr 10 ) 35 (Al 2 O 3 ) 65 /a-Si:H] 41 -II that were obtained by ion-beam sputtering. For determination of the phase composition of the buried amorphous silicon interlayers in these MLNS, we used nondestructive ultrasoft X-ray emission spectroscopy technique (USXES). The use of the USXES enables to register the silicon Si L 2,3 -spectra providing the information about the local partial densities of Si s and d occupied states of silicon valence band in silicon-contained materials. According to the simulation and fitting procedure to the experimental data, Fe 3 Si and a small amount of oxide (SiO 2 :H) were found in the interlayer of MLNS-I. At the same time, the content of silicon dioxides (SiO 2 ) decrease from surface layers to the deep ones. On the other hand, simulation of the phase composition of MLNS-II reveals the presence of the silicides Fe 3 Si and Co 2 Si, oxides SiO 2 and SiO 1.3 , and a small amount of a-Si:H. The percentage of cobalt silicide Co 2 Si and suboxide SiO 1.3 increased in the deep layers of the MLNS-II. KEYWORDS interfaces, ion-beam sputtering, multilayer nanostructures, silicides of 3d metals, silicon oxides, ultrasoft X-ray emission spectroscopy

Interatomic interactions and superstructures of multilayer nanostructures (MLNS) consisting of ferromagnetic composite layers and silicon interlayers with or without hydrogen are studied here by means of X-ray diffraction (XRD), X-ray reflectivity (XRR), IR spectroscopy, and ultra-soft X-ray emission spectroscopy (USXES). The MLNS [(Co45Fe45Zr10)35(Al2O3)65/a-Si:H]100 and [(Co45Fe45Zr10)35(Al2O3)65/a-Si]120 were deposited on the substrate Si(100) by ion-beam sputtering of two targets, where the first target was a plate of Co45Fe45Zr10 alloy with Al2O3 inserts, and the second target was a single-crystal silicon. Our results show that the iron (FeSi2) and cobalt (CoSi, CoSi2) silicides are formed at the interfaces of the composite metal-containing layer/silicon interlayer. It is demonstrated that the metal clusters of composite layers and interface silicides are partially oxidized to form iron, cobalt, and silicon oxides together with zirconium silicate. Due to the formation of silicides at the interfaces, the composition of MLNS superstructures becomes more complex, and their periods are significantly reduced (down to 5–6 nm) compared to the nominal values of bilayers of about 6.9 nm.

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In this work we obtained porous silicon with different porosity by electrochemical etching and studied their photoluminescence. Two well-known photoluminescence mechanisms of porous silicon related to the composition and morphology of the surface have been discovered, and it has been established at what porosity values they prevail. It is shown that an increase in the porosity index leads to an increase in the intensity of photoluminescence.

The aim of this work was the formation of multilayer structures of macroporous silicon and the study of their structural, morphological, and optical properties in comparison with the properties of multilayer structures of mesoporous silicon. The paper presents the results of the development of techniques for the formation of multilayer structures of porous silicon por-Si by stepwise change in the current with two-stage modes of electrochemical etching.The data on the morphology, composition, and porosity of macroporous and mesoporous silicon samples were obtained using scanning electron microscopy, IR spectroscopy, and X-ray reflectivity. It was shown that with the two-stage growth of porous silicon layers, the depth of the boundary between the layers of the structure was determined by the primary mode of electrochemical etching, while the total layer thickness increased with an increase in the current density of electrochemical etching.A comparative analysis of the relative intensity and fine structure of vibrational modes of IR spectra indicated a significantly more developed specific pore surface and greater sorption capacity of mesoporous silicon as compared to macroporous silicon.     REFERENCES 1. Pacholski C. Photonic crystal sensors based on porous silicon. Sensors. 2013;13(4): 4694–4713. https://doi.org/10.3390/s130404694 2. Harraz F. A. Porous silicon chemical sensors and biosensors: A review. Sensors and Actuators B: Chemical. 2014;202: 897–912. https://doi.org/10.1016/j.snb.2014.06.0483. Qian M., Bao X. Q., Wang L. W., Lu X., Shao J., Chen X. S. Structural tailoring of multilayer porous silicon for photonic crystal application. Journal of Crystal Growth. 2006;292(2): 347–350. https://doi.org/10.1016/j.jcrysgro.2006.04.0334. Len’shin A. S., Kashkarov V. M., Turishchev S. Yu., Smirnov M. S., Domashevskaya E. P. Effect of natural aging on photoluminescence of porous silicon. Technical Physics Letters. 2011;37(9): 789–792. https://doi.org/10.1134/S10637850110901245. Kheifets L. I., Neimark A. B. Multiphase processes in porous media. Moscow: Khimiya Publ.; 1982. 320 p. (In Russ.)6. Canham L. Handbook of porous silicon. Switzerland: Springer International Publishing; 2014. 733 p.7. Zimin S. P. Porous silicon – material with new properties. Soros Educational Journal. 2004;8(1): 101–107. Available at: http://window.edu.ru/resource/217/21217/files/0401_101.pdf (In Russ., abstract in Eng.) 8. Seredin P. V., Lenshin A. S., Goloshchapov D. L., Lukin A. N., Arsentyev I. N., Bondarev A. D., Tarasov I. S. Investigations of nanodimensional Al2O3films deposited by ion-plasma sputtering onto porous silicon. Semiconductors. 2015;49(7): 915–920. https://doi.org/10.1134/S10637826150702109. Seredin P. V., Lenshin A. S., Mizerov A. M., Leiste H., Rinke M. Structural, optical and morphological properties of hybrid heterostructures on the basis of GaN grown on compliant substrate por-Si(111). Applied Surface Science. 2019;476: 1049–1060. https://doi.org/10.1016/j.apsusc.2019.01.23910. Seredin P. V., Leiste H., Lenshin A. S., Mizerov A. M. Effect of the transition porous silicon layer on the properties of hybrid GaN/SiC/por-Si/Si(111) heterostructures. Applied Surface Science. 2020;508(145267): 1–14. https://doi.org/10.1016/j.apsusc.2020.14526711. Lenshin A. S., Barkov K. A., Skopintseva N. G., Agapov B. L., Domashevskaya E. P. Influence of electrochemical etching modes under one stage and two Stage formation of porous silicon on the degree of oxidation of its surface layer under natural conditions. Kondensirovannye sredy i mezhfaznye granitsy = Condensed Matter and Interphases. 2019;21(4): 534–543. https://doi.org/10.17308/kcmf.2019.21/2364 (In Russ., abstract in Eng.) 12. Buttard D., Dolino G., Bellet D., Baumbach T., Rieutord F. X-ray reflectivity investigation of thin p-type porous silicon layers. Solid State Communications. 1998;109(1): 1–5. https://doi.org/10.1016/S0038-1098(98)00531-613. Lenshin A. S., Seredin P. V., Agapov B. L., Minakov D. A., Kashkarov V. M. Preparation and degradation of the optical properties of nano-, meso‑,and macroporous silicon. Materials Science in Semiconductor Processing. 2015;30: 25–30. https://doi.org/10.1016/j.mssp.2014.09.04014. Ksenofontova O. I., Vasin A. V., Egorov V. V., Bobyl’ A. V., Soldatenkov F. Yu., Terukov E. I., Ulin V. P., Ulin N. V., Kiselev O. I. Porous silicon and its applications in biology and medicine. Technical Physics. 2014;59(1): 66–77. https://doi.org/10.1134/S1063784214010083