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Experiment and simulation of the compositional evolution of Ti-B thin films deposited by sputtering of a compound target Deposition of vanadium carbide thin films using compound target sputtering and their field emission

Articles you may be interested inGeneric trend of work functions in transition-metal carbides and nitrides Influence of the negative oxygen ions on the structure evolution of transition metal oxide thin films A systematic density functional theory study of the electronic structure of bulk and (001) surface of transitionmetals carbides Application of compact microwave ion source to low temperature growth of transition metal nitride thin films for vacuum microelectronics devices Rev.Work functions of transition metal nitride and carbide thin films were measured. The materials investigated were ZrN, NbN, HfN, TaN, HfC, and TaC. The films were prepared either by radio-frequency magnetron sputter deposition or by ion beam assisted deposition. The work function was measured by Kelvin probe in air. The work functions of ZrN and HfN ranged between 4.6 and 4.7 eV, and were similar to or slightly lower than that of NbN and TaN, 4.7 or 4.8 eV. The work function of TaC was approximately 5.0 eV. The higher work function of carbide may be attributed to lower electronegativity of carbon as compared to nitrogen.