To demonstrate that roll-to-roll (R2R) gravure printing is a suitable advanced manufacturing method for flexible thin film transistor (TFT)-based electronic circuits, three different nanomaterial-based inks (silver nanoparticles, BaTiO3 nanoparticles and single-walled carbon nanotubes (SWNTs)) were selected and optimized to enable the realization of fully printed SWNT-based TFTs (SWNT-TFTs) on 150-m-long rolls of 0.25-m-wide poly(ethylene terephthalate) (PET). SWNT-TFTs with 5 different channel lengths, namely, 30, 80, 130, 180, and 230 μm, were fabricated using a printing speed of 8 m/min. These SWNT-TFTs were characterized, and the obtained electrical parameters were related to major mechanical factors such as web tension, registration accuracy, impression roll pressure and printing speed to determine whether these mechanical factors were the sources of the observed device-to-device variations. By utilizing the electrical parameters from the SWNT-TFTs, a Monte Carlo simulation for a 1-bit adder circuit, as a reference, was conducted to demonstrate that functional circuits with reasonable complexity can indeed be manufactured using R2R gravure printing. The simulation results suggest that circuits with complexity, similar to the full adder circuit, can be printed with a 76% circuit yield if threshold voltage (Vth) variations of less than 30% can be maintained.

No abstract

Robust nanogap electrodes for nanodevices with a separation of 3.0 ± 1.7 nm were simultaneously mass-produced at a yield of 90% by a combination of electron beam lithography (EBL) and electroless gold plating (EGP). Nanogap electrodes demonstrated their robustness as they maintained their structure unchanged up to temperatures of 170 °C, during the isotropic oxygen plasma ashing removal of the amorphous carbon overlayer resulting from scanning electron microscopy observations, therefore maintaining their surface reactivity for EGP and formation of a self-assembled monolayer. A gold layer grows over the electrode surface during EGP, narrowing the separation between the electrodes; growth stops around 3 nm due to a self-termination phenomenon. This is the main factor in the high yield and reproducibility of the EGP process because it prevents contact between the electrodes. A 90% yield is achieved by also controlling the etching and physisorption of gold clusters, which is accomplished by reduction of triiodide ions and heat treatment of the EGP solution, respectively. A mixed self-assembled monolayer of octanethiol and decanedithiol can be formed at the surface of the nanogap electrodes after the oxygen plasma treatment, and decanethiol-protected Au nanoparticles were chemisorbed between the self-terminated nanogap electrodes via decanedithiol. Chemically assembled single-electron transistors based on the nanogap electrodes exhibit ideal, stable, and reproducible Coulomb diamonds.

A single electron has been observed on a nanodot in a double-barrier tunneling structure by noncontact atomic-force microscopy at fixed separation. Frequency shift-voltage dependence of an Au-coated cantilever/vacuum/1-decanethiol protected Au nanodot/1-octanethiol self-assembled monolayer/Au substrate structure deviates from the theoretical parabolic curve, which is attributed to the change in the number of quantized electrons on the Au nanodot caused by the Coulomb blockade phenomena.