Abstract-To obtain high-performance thin-film transistors (TFTs), a comprehensive study of the channel position of TFTs inside a location-controlled grain was carried out. The location of the grain is precisely controlled by the -Czochralski process using an excimer laser. The grain was grown from a thin Si column embedded in SiO 2 (grain filter). The characteristics of the TFTs drastically improved when the channel region was not centered above the grain filter. With TFTs whose current-flow direction is parallel to the radial direction of the grain filter, an electron mobility and subthreshold swing of 600 cm 2 V s and 0.21 V/dec respectively were obtained.

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