2,6-Diphenylbenzo[1,2-b:4,5-b']dichalcogenophenes including thiophene, selenophene, and tellurophene analogues as organic semiconductors for field-effect transistors were effectively synthesized in three steps from commercially available 1,4-dibromobenzene. All three benzodichalcogenophenes acted as good p-type semiconductors, and particularly the selenophene analogue, 2,6-diphenylbenzo[1,2-b:4,5-b']diselenophene, showed high FET mobility of 0.17 cm2 V-1 s-1.

[reaction, structures: see text] A general and convenient synthesis of benzo[1,2-b:4,5-b']dichalcogenophenes including the thiophene (BDT, 1), selenophene (BDS, 2), and tellurophene (BDTe, 3) homologues is developed. Thus synthesized heterocycles are structurally characterized by single-crystal X-ray analysis, and all three homologues are isostructural with one another. They all have completely planar molecular structures packed in a herringbone arrangement. Their physicochemical properties were also elucidated by means of cyclic voltammetry (CV) and UV-vis spectra.

[1]Benzoselenopheno[3,2-b][1]benzoselenophene (BSBS) and its 2,7-diphenyl derivative (DPh-BSBS) were readily synthesized from diphenylacetylene and bis(biphenyl-4-yl)acetylene, respectively, with a newly developed straightforward selenocyclization protocol. In contrast to the parent BSBS that has poor film-forming properties, the diphenyl derivative DPh-BSBS formed a good thin film on the Si/SiO(2) substrate by vapor deposition. X-ray diffraction examination revealed that this film consists of highly ordered molecules that are nearly perpendicular to the substrate, making it suitable for use in the fabrication of organic field-effect transistors (OFETs). When fabricated at different substrate temperatures (room temperature, 60 degrees C, and 100 degrees C) in a "top-contact" configuration, all the DPh-BSBS-based OFET devices exhibited excellent p-channel field-effect properties with hole mobilities >0.1 cm(2) V(-1) s(-1) and current on/off ratios of approximately 10(6). This high performance was essentially maintained over 3000 continuous scans between V(g) = +20 and -100 V and reproduced even after storage under ambient laboratory conditions for at least one year.

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We report on the fabrication and characterization of single crystal field-effect transistors (FETs) based on 2,6-diphenylbenzo[1,2-b:4,5-b']diselenophene (DPh-BDSe). These organic field-effect transistors (OFETs) function as p-channel accumulation-mode devices. At room temperature, for the best devices, the threshold voltage is less than -7V and charge carrier mobility is nearly gate bias independent, ranging from 1cm 2 /Vs to 1.5 cm 2 /Vs depending on the source-drain bias. Mobility is increased slightly by cooling below room temperature and decreases below 280 K.