In a previous paper ͓Avotina et al., Phys. Rev. B 71, 115430 ͑2005͔͒ we have shown that in principle it is possible to image the defect positions below a metal surface by means of a scanning tunneling microscope. The principle relies on the interference of electron waves scattered on the defects, which give rise to small but measurable conductance fluctuations. Whereas in that work the band structure was assumed to be free-electron like, here we investigate the effects of Fermi surface anisotropy. We demonstrate that the amplitude and period of the conductance oscillations are determined by the local geometry of the Fermi surface. The signal results from those points for which the electron velocity is directed along the vector connecting the point contact to the defect. For a general Fermi surface geometry the position of the maximum amplitude of the conductance oscillations is not found for the tip directly above the defect. We have determined optimal conditions for determination of defect positions in metals with closed and open Fermi surfaces.

The oscillatory voltage dependence of the conductance of a quantum point contact in the presence of a single point-like defect has been analyzed theoretically. Such signals are detectable and may be exploited to obtain information on defect positions below a metal surface. Both tunnel junctions and ballistic contacts of adiabatic shape have been considered. The effect of quantum interference has been taking into account between the principal wave that is directly transmitted through the contact and the partial wave that is scattered by the contact and the defect. This effect leads to oscillations of the conductance as a function of applied voltage. We obtain the dependence of the period and amplitude of the conductance oscillations on the position of the defect inside the metal.Comment: 16 pages, 7 figure