Polymer resins are popular dry lubricants and protective coatings for metal products. However, their friction coefficient is high, which leads to increased wear rates and limited service life. Reinforcement with nanoscale fillers, due to their large surface area and their uniform distribution within the polymer matrix volume, can help reduce friction and wear. This paper aimed to study the effect of three-dimensional organization of silicon dioxide nanoparticles with a concentration of 1, 3, and 5% on the mechanical properties of an epoxy resin. The dispersion of nanoparticles was carried out using ultrasonic field technology. The friction coefficient was measured using a pendulum tribometer. Empirical results have shown that reduction in the concentration of nanoparticles from 5% to 1% resulted in a two-fold decrease in the values of the friction coefficient. Also, it was found that prolongation of test time in experiments with a nanoparticle concentration of 3 and 1% had practically no effect on the friction coefficient values. This behavior is associated with the polymer interface mobility regulation due to the low concentration of nano inclusions and uniform three-dimensional organization in the polymer matrix by the ultrasonic field, which contributed to a uniform redistribution of applied loads. The developed technique can be used to other types of polymer nanocomposites to study the effect of the three-dimensional organization of nanoscale fillers on wear resistance, bending strength, and impact resistance.

Semiconductor field-emission cathodes have gained considerable popularity in modern radio electronics and electronic optics due to the high-power generation of the electron beam in the external electric field at temperatures close to the room ones. However, their wide application is restricted by the high dependence of the electron emission current on the value of the applied field and geometrical parameters of the cathode. This study aimed to examine the effect of resonance processes on amplifying the field emission of the multi-pointed semiconductor cathode. Modeling the behavior of resonant tunneling of electrons from semiconductors to vacuum was simulated by solving the one-dimensional Schrodinger’s equation, and the amplification due to resonant processes was estimated. The modeling results showed that as the electric field increases, the resonance conditions shift towards low energy levels. With the increase in the width of the barrier for the electron inside the solid body, the resonance conditions shift towards higher energies. It has been established that in onedimensional semiconductors with electrons of low conductivity width, the resonant energy coincides with the Fermi level. These cathode properties are optimal for amplifying the emission current and reducing failures of vacuum electronic devices based on semiconductive field cathodes. The proposed technique can be used to study the regularities of emission amplification due to resonant processes in multipoint semiconductor cathodes with multilayered structure and with metal tips.