No abstract

Inorganic-organic Schottky contacts based on Gelatin on n-Si wafer have been prepared by a spin coating technique. The reverse and forward bias capacitance-voltage and conductance-voltage properties of the Al/Gelatin/n-Si Schottky diode at room temperature in the frequency range from 30 kHz to 1 MHz have been explored by the series resistance and interface states effects into account. The conductance and Hill-Coleman method were used to determine interfacial layer capacitance, the "R" _"s" and D_it. Result of experiments approved that the "R" _"s" and "D" _"it" are considerable parameters which severely impact the basic electrical parameters of Al/Gelatin/n-Si Schottky diode. Both the measured capacitance and conductance were corrected to obtain the real diode capacitance ("C" _"c" ) and conductance ("G" _"c" ). Schottky diode parameters such as barrier height ("Φ" _"B" ), ionized donor density ("N" _"D" ), Fermi level ("E" _"F" ), built-in voltage were extracted from frequency-dependent "C" _"c" "-V" and "1" ⁄("C" _"c" ^"2" ) "-V" relations.The "R" _"s" and "D" _"it" values decrease, while the "Φ" _"B" values increase as the frequency increases. Results reveal that the fabricated diode can be used as an powerful material for electronic applications

No abstract

No abstract

No abstract